Maximum Collector Emitter Voltage (V):1200

Maximum Continuous Collector Current (A):400

Mounting Type:Screw Mount

Pin Count:12

Dimensions (mm):105 x 45 x 24

Configuration:3 Phase Bridge

Maximum Gate Emitter Voltage (V):±20

Channel Type:N

    Engineered for optimal performance in demanding industrial environments, the SEMIKRON SKM400GB125D IGBT Transistor Modules boast a robust design that withstands the rigors of high-voltage and high-current applications. This makes them an ideal choice for critical systems requiring unparalleled reliability.

    Withstanding up to 1250 Vdc, these modules are capable of handling a maximum continuous collector current of 400 Amperes, ensuring they can support even the most power-intensive operations without compromising on performance.

    The screw mount design facilitates quick and secure installation, while the compact size of 105 x 45 x 24 mm ensures efficient use of space in compact industrial setups. This modular design also promotes easy maintenance and upgrades.

    Featuring a 3 Phase Bridge configuration, the SEMIKRON SKM400GB125D IGBT Transistor Modules are tailored for seamless integration into complex control systems, offering enhanced control over power distribution and utilization.

    Equipped with a maximum gate emitter voltage of ±20 V, these modules provide precise control over the switching process, ensuring minimal power loss and maximizing system efficiency. Their N-channel configuration further optimizes power flow, making them suitable for a wide range of applications in the field of power electronics.