Rated Current (A):300

Rated Voltage (V):600

Operating Temperature Range (°C):-40 to 150

Maximum Collector-Emitter Voltage (V):1200

Power Dissipation (W):1200

Switching Frequency (kHz):50

Insulation Resistance (MΩ):≥ 1000

Package Type:TO-247

Cooling Method:Thermal Pad

Operating Humidity Range (%):5 to 95 non-condensing

    The FUJIFILM 2MBI300N-060 IGBT Power Transistor Modules are engineered to deliver exceptional performance in high-voltage scenarios, making them ideal for applications in the semiconductor manufacturing, renewable energy, and automotive sectors.

    Featuring a compact design that optimizes space utilization without compromising on efficiency, these modules are equipped with advanced switching technologies to ensure seamless operation under demanding conditions.

    Withstanding temperatures ranging from -40°C to +150°C, they are designed to endure harsh industrial environments, ensuring reliability across various operational scenarios.

    Equipped with a thermal pad and compatible heat sink, the modules offer efficient heat dissipation, enabling prolonged use without overheating, thus enhancing their lifespan and reducing maintenance costs.

    Compliance with international safety standards ensures that the FUJIFILM 2MBI300N-060 modules are safe to integrate into any system, offering peace of mind to users in terms of performance and reliability.